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[Analysis Case] Evaluation of the Diffusion Layer Distribution of a Transistor (MOSFET)

Evaluation of diffusion layers in specific areas using SCM.

This is an introduction to a case study of SCM analysis of commercially available LSI internal MOSFETs. First, the cross-section of a specific transistor is exposed through mechanical polishing. At this time, the Si surface is polished flat to the order of nm. The SCM image allows for the two-dimensional confirmation of layer distribution. While quantitative discussions cannot be made, it is possible to roughly understand the relationship of concentration magnitudes. Additionally, the p/n polarity of the diffusion layer can also be identified. Furthermore, by conducting SEM observations at the same location and performing image synthesis with the SCM analysis results, the positional relationship between the diffusion layer and the upper wiring structure can be clarified.